High Voltage IGBT
IXSN 55N120A
V CES
I C25
= 1200 V
= 110 A
V CE(sat) = 4 V
3
Short Circuit SOA Capability
2
Preliminary Data
4
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B
V CES
V CGR
V GES
V GEM
I C25
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GE = 1 M W
Continuous
Transient
T C = 25 ° C
1200
1200
± 20
± 30
110
V
A
V
V
A
2
1
3
4
I C90
I CM
T C = 90 ° C
T C = 25 ° C, 1 ms
55
160
A
A
1 = Emitter ?
2 = Gate
3 = Collector
4 = Emitter ?
SSOA
(RBSOA)
t SC
(SCSOA)
P C
V ISOL
T J
T JM
T stg
V GE = 15 V, T VJ = 125 ° C, R G = 22 W
Clamped inductive load, L = 30 m H
V GE = 15 V, V CE = 0.6 V CES , T J = 125 ° C
R G = 22 W , non-repetitive
T C = 25 ° C IGBT
50/60 Hz t = 1 min
I ISOL £ 1 mA t=1s
I CM = 110
@ 0.8 V CES
10
500
2500
3000
-55 ... +150
150
-55 ... +150
A
m s
W
V~
V~
° C
° C
° C
? Either Emitter terminal can be used as Main or
Kelvin Emitter
Features
? International standard package
miniBLOC
? Aluminium-nitride isolation
- high power dissipation
? Isolation voltage 3000 V~
? UL registered E 153432
? Low V CE(sat)
- for minimum on-state conduction
losses
M d
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
? Low collector-to-case capacitance
(<100 pF)
Weight
30
g
- reduces RFI
? Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
Symbol
BV CES
V GE(th)
Test Conditions
I C = 6 mA, V GE = 0 V
I C = 8 mA, V CE = V GE
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
1200 V
4 8 V
? AC motor speed control
? DC servo and robot drives
? DC choppers
? Uninterruptible power supplies (UPS)
? Switch-mode and resonant-mode
I CES
I GES
V CE(sat)
V CE = 0.8 V CES
V GE = 0 V
V CE = 0 V, V GE = ± 20 V
I C = I C90 , V GE = 15 V
T J = 25 ° C
T J = 125 ° C
1
2.5
± 200
4
mA
mA
nA
V
power supplies
Advantages
? Space savings
? Easy to mount with 2 screws
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
95594B(6/97)
1-2
相关PDF资料
IXSN62N60U1 IGBT 90A 600V SOT-227B
IXSN80N60BD1 IGBT 600V SCSOA SOT-227B
L17D438SP TOOL INSERT/EXTRACT FOR 17RR
L595200 CONTROL CURRNT TRNSFMR 200A IART
LC4HW-R6-DC24VS COUNTER DIGITAL 24VDC SCREW TERM
LCS-10 LIQUID LEVEL CONTROL
LD4006P0 COUNTER 6 DIGIT DUAL 4.0" RED
LD412460 DIODE MOD ISO DUAL 2400V 600A
相关代理商/技术参数
IXSN55N120AU1 功能描述:IGBT 晶体管 110 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXSN55N120U1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B
IXSN62N60AU1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B
IXSN62N60U1 功能描述:IGBT 晶体管 90 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXSN80N60A 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Current IGBT - Short Circuit SOA Capability
IXSN80N60AU1 功能描述:IGBT 晶体管 80 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXSN80N60BD1 功能描述:IGBT 晶体管 160 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXSP10N60B2D1 功能描述:IGBT 晶体管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube